bcx 69 1 nov-03-1999 pnp silicon af transistors ? for general af applications ? high collector current ? high current gain ? low collector-emitter saturation voltage ? complementary type: bcx 68 (npn) 2 1 3 vps05162 2 type marking pin configuration package bcx 69 bcx 69-10 bcx 69-16 bcx 69-25 ce cf cg ch 1 = b 1 = b 1 = b 1 = b 2 = c 2 = c 2 = c 2 = c 3 = e 3 = e 3 = e 3 = e sot-89 sot-89 sot-89 sot-89 maximum ratings parameter symbol values unit collector-emitter voltage v ceo 20 v collector-base voltage v cbo 25 emitter-base voltage v ebo 5 dc collector current i c 1 a peak collector current i cm 2 base current i b 100 ma peak base current i bm 200 total power dissipation , t s = 130 c p tot 1 w junction temperature t j 150 c storage temperature t st g -65 ... 150 thermal resistance junction ambient 1) r thja 75 k/w junction - soldering point r thjs 20 1) package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 cu
bcx 69 2 nov-03-1999 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. characteristics collector-emitter breakdown voltage i c = 30 ma, i b = 0 v (br)ceo 20 - - v collector-base breakdown voltage i c = 10 a, i b = 0 v (br)cbo 25 - - emitter-base breakdown voltage i e = 1 a, i c = 0 v (br)ebo 5 - - collector cutoff current v cb = 25 v, i e = 0 i cbo - - 100 na collector cutoff current v cb = 25 v, i e = 0 , t a = 150 c i cbo - - 100 a dc current gain 1) i c = 5 ma, v ce = 10 v h fe 50 - - - dc current gain 1) i c = 500 ma, v ce = 1 v bcx 69 bcx 69-10 bcx 69-16 bcx 69-25 h fe 85 85 100 160 - 100 160 250 375 160 250 375 dc current gain 1) i c = 1 a, v ce = 1 v h fe 60 - - collector-emitter saturation voltage1) i c = 1 a, i b = 100 ma v cesat - - 0.5 v base-emitter voltage 1) i c = 5 ma, v ce = 10 v i c = 1 a, v ce = 1 v v be(on) - - 0.6 - - 1 ac characteristics transition frequency i c = 100 ma, v ce = 5 v, f = 20 mhz f t - 100 - mhz 1) pulse test: t 300 s, d = 2%
bcx 69 3 nov-03-1999 total power dissipation p tot = f ( t a *; t s ) * package mounted on epoxy 0 0.0 ehp00468 bcx 69 150 50 100 c t as t 0.2 0.4 0.6 0.8 1.0 w 1.2 p tot t t ; as transition frequency f t = f ( i c ) v ce = 5v 10 10 10 10 bcx 69 ehp00469 f ma mhz 0123 5 t 3 10 10 2 1 10 5 5 5 c collector cutoff current i cbo = f ( t a ) v cb = 25v 10 0 50 100 150 bcx 69 ehp00471 t a 5 10 10 na 10 cb0 5 5 5 10 10 5 4 3 2 1 0 max typ ?c permissible pulse load p totmax / p totdc = f ( t p ) 10 ehp00470 bcx 69 -6 0 10 5 d = 5 10 1 5 10 2 3 10 10 -5 10 -4 10 -3 10 -2 10 0 s 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 t p = d t t p t tot max tot p dc p p t
bcx 69 4 nov-03-1999 collector-emitter saturation voltage i c = f ( v cesat ), h fe = 10 0 0.4 0.8 bcx 69 ehp00473 v ce sat v ma 10 4 1 10 10 10 2 10 10 3 10 5 5 5 10 0 0.2 0.6 100 25 -50 c ? c ? c ? c base-emitter saturation voltage i c = f ( v besat ), h fe = 10 10 0 0.6 bcx 69 ehp00472 v be sat 10 ma 10 10 10 4 3 2 1 0 5 5 5 v 0.2 0.4 0.8 1.0 1.2 100 25 -50 c ? c ? c ? c collector current i c = f ( v be ) v ce = 1v 10 0 0.6 bcx 69 ehp00474 v be 10 ma 10 10 10 4 3 2 1 0 5 5 5 v 0.2 0.4 0.8 1.0 1.2 100 25 -50 c ? c ? c ? c dc current gain h fe = f ( i c ) v ce = 1v 10 10 10 10 bcx 69 ehp00475 h ma 0 1 34 fe 3 10 10 2 0 10 5 5 10 1 2 10 5 100 25 -50 555 c ? c ? c ? c
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